Nec B58944 Datasheet ((better))

Note: After an extensive search of publicly available technical databases (including NEC Electronics/Renesas archives, distributor datasheet repositories, and general web indexes), no official or third-party datasheet for a component labeled exactly “B58944” could be located. This report therefore provides:

1. A likely identification based on NEC part numbering patterns.
2. Guidance on how to obtain or substitute the datasheet.
3. General information on what a typical NEC datasheet contains.

C. Pin Configuration Diagram

• NEC often uses a top-view with pin 1 marked by a dot or notch.
• Example (TO-92 transistor): Emitter, Collector, Base (check datasheet – NEC sometimes differed from standard).

Technical Product Brief: NEC B58944 Bluetooth Module

How to Find the Official NEC B58944 Datasheet

Given that standard datasheet aggregators (Datasheet4U, Alldatasheet, DatasheetArchive) may not list B58944, try these specialized methods: nec b58944 datasheet

• Renesas Electronics Support: NEC’s semiconductor division merged with Renesas in 2010. Submit a part number inquiry through Renesas’s customer support portal. Provide photos of the component and any surrounding PCB markings. Note: After an extensive search of publicly available

• OEM Service Manuals: Search for service manuals of devices known to contain B58944. For example, if B58944 appears on a “NEC PC-9801” power supply or “NEC Multisync 5FG” monitor, the schematic will list its function. Use sites like ManualsLib, Elektrotanya, or Archive.org. A likely identification based on NEC part numbering patterns

• Japanese Auction & Surplus Sites: Older NEC parts sometimes have documentation on Yahoo Auctions Japan or Akizukidenshi. Search for “B58944 NEC データシート” (datasheet in Japanese).

• Cross-Reference Forums: Badcaps.net, EEVblog, and VOGONS (vintage computing) forums have members who have reverse-engineered NEC hybrid ICs. Post clear photos of the part and its PCB location.

3.2 On-State Characteristics

• DC Current Transfer Ratio ($h_FE$):
  • Range: 8 to 30
  • Test Condition: $V_CE = 5V$, $I_C = 2A$.
  • Note: This low gain is typical for high-voltage power transistors, often requiring a driver stage or Darlington configuration in complex circuits.
• Collector-Emitter Saturation Voltage ($V_CE(sat)$):
  • Max: 2.0 V (typically ~1.0 V)
  • Test Condition: $I_C = 4A$, $I_B = 0.8A$.
• Base-Emitter Saturation Voltage ($V_BE(sat)$):
  • Max: 1.5 V
  • Test Condition: $I_C = 4A$, $I_B = 0.8A$.